ssm6n37fe TOSHIBA Semiconductor CORPORATION, ssm6n37fe Datasheet - Page 3

• Manufacturer Part Number: ssm6n37fe
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

(Q1, Q2 Common)
500
400
300
200
100
6
5
4
3
2
1
0
5
4
3
2
1
0
−50
0
0
0
Common Source
Gate-source voltage V
Drain-source voltage V
Ambient temperature Ta (°C)
0.2
2
50m A / 2.5 V
0
4.5 V
R
DS (ON)
R
DS (ON)
4
0.4
20m A / 1.8 V
I
D
50
– V
– V
10 V
DS
I D = 10m A / V GS = 1.5 V
– Ta
GS
0.6
6
25 °C
GS
I D =100mA
Common Source
Common Source
Ta = 25 °C
100m A / 4.5 V
DS
100
V GS = 1.2 V
Ta = 100 °C
(V)
0.8
8
(V)
2.5 V
− 25 °C
1.8 V
1.5 V
150
10
1.0
3
1000
0.01
100
0.1
1.0
0.5
10
6
5
4
3
2
1
0
0
−50
1
0
0
Ta = 100 °C
Common Source
1.5 V
V GS = 4.5Ｖ
Ta = 25°C
Gate-source voltage V
Ambient temperature Ta (°C)
100
1.8 V
Drain current I
2.5V
0
− 25 °C
1.0
R
DS (ON)
200
I
D
25 °C
V
th
– V
50
– Ta
GS
– I
300
D
D
2.0
(mA)
SSM6N37FE
GS
Common Source
V DS = 3 V
I D = 1 mA
Common Source
V DS = 3 V
100
400
(V)
2009-11-12
150
3.0
500