ssm6j212fe TOSHIBA Semiconductor CORPORATION, ssm6j212fe Datasheet
ssm6j212fe
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ssm6j212fe Summary of contents
Page 1
... T 150 ch −55 to 150 °C T stg and the significant change etc.) are within the 2 ) Equivalent Circuit SSM6J212FE 1,2,5,6 ： Drain 3 ： Gate ES6 4 ： Source JEDEC ― JEITA ― in 2-2N1J TOSHIBA Weight : 3mg ( typ. ) 2009-12-09 Unit: mm ...
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... DSF OUT R L (c) V OUT requires a higher voltage than V GS (on) GS (off) vary depending on board material, board area, board D 2 SSM6J212FE Min Typ. Max ⎯ ⎯ -20 ⎯ ⎯ (Note 4) -15 ⎯ ⎯ -1 ⎯ ⎯ ±1 ⎯ -0.3 -1.0 ⎯ ...
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... Gate–source voltage V 140 Common Source Ta = 25°C 120 100 − 25 ° -1.0 -0.5 0 −50 150 Ambient temperature Ta (°C) 3 SSM6J212FE I – Common Source − 25 °C 25 °C -1.0 -2.0 -3.0 ( – (ON) D -1.5 V -1.8 V -2.5 V -4.5 V -8.0 -2.0 -4.0 -6.0 Drain current I ...
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... G 0.1 Ta =100 °C 0.01 0.001 -10 0 10000 t off t f 1000 C iss 100 C oss rss -100 -0.001 ( SSM6J212FE I – −25 °C 25 °C 0.2 0.4 0.6 0.8 1.0 1.2 Drain–source voltage V ( – Common Source - -2 ° 4.7Ω ...
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... Cu Pad: 645 mm 1 0.001 0.01 0 Pulse Width t (s) w 600 500 400 300 200 100 100 1000 Ambient temperature Ta (°C) 5 SSM6J212FE P – Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 645 100 150 2009-12-09 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM6J212FE 2009-12-09 ...