ssm6j212fe TOSHIBA Semiconductor CORPORATION, ssm6j212fe Datasheet - Page 2

• Manufacturer Part Number: ssm6j212fe
• Description: Toshiba Field-effect Transistor Silicon P-channel Mos Type U-mos
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Notice on Usage
this product. For normal switching operation, V
voltage than V
Handling Precaution
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
thickness and pad area. When using this device, please take heat dissipation into consideration
V
Take this into consideration when using the device.
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
Thermal resistance R
Drain-source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source forward voltage
Note3: Pulse test
Note4: V
(a) Test Circuit
th
−
2.5V
can be expressed as the voltage between gate and source when the low operating current value is I
0
rating of drain-source voltage
DSX
10 μs
V
R
Duty ≤ 1%
V
Common Source
Ta = 25°C
Characteristic
th.
DD
IN
G
mode (the application of a plus voltage between gate and source) may cause decrease in maximun
: t
(The relationship can be established as follows: V
= 4.7 Ω
= -10 V
r
, t
f
Turn-on time
Turn-off time
< 5 ns
IN
th (ch-a)
and drain power dissipation P
(Ta = 25°C)
R
V
OUT
V
V
L
DD
R
Symbol
(BR) DSS
(BR) DSX
⏐Y
V
DS (ON)
I
Q
I
C
C
C
Q
GSS
DSS
V
t
Q
t
DSF
off
oss
on
gs1
rss
iss
gd
th
fs
g
⏐
GS (on)
I
I
V
V
V
V
I
I
I
I
V
f = 1 MHz
V
V
V
V
I
D
D
D
D
D
D
D
DS
GS
DS
DS
DS
DD
GS
DD
GS
= -1 mA, V
= -1 mA, V
= -3.0 A, V
= -2.0 A, V
= -1.0 A, V
= -0.5 A, V
= 4.0 A, V
requires a higher voltage than V
= -20 V, V
= -3 V, I
= -3 V, I
= -10 V, V
= ±8 V, V
= -10 V, I
= 0 to -2.5 V, R
= -10 V, I
= -4.5 V
(b) V
(c) V
2
Test Conditions
GS
D
D
GS
GS
GS
GS
GS
GS
D
D
DD
DS
= -1 mA
= -1.0 A
GS
GS
= -2.0 A
= 0 V
vary depending on board material, board area, board
= 0 V
= 5 V
= -4.5 V
= -2.5 V
= -1.8 V
= -1.5 V
OUT
IN
= 0 V
= -4.0 A,
= 0 V
= 0 V
GS (off)
G
= 4.7 Ω
V
V
DD
DS (ON)
−2.5 V
< V
0 V
th
(Note 4)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
< V
GS (on).
th
t
on
90%
-0.3
Min
and V
-20
-15
4.7
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)
t
r
90%
10%
GS (off)
Typ.
35.3
41.3
48.6
56.7
14.1
0.87
970
127
109
143
9.4
1.7
2.4
47
⎯
⎯
⎯
⎯
⎯
SSM6J212FE
t
10%
off
requires a lower
40.7
49.0
65.4
94.0
Max
-1.0
1.2
±1
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-1
D
2009-12-09
t
f
= -1 mA for
Unit
mΩ
nC
μA
μA
pF
ns
V
V
V
S
V