ssm6l12tu TOSHIBA Semiconductor CORPORATION, ssm6l12tu Datasheet - Page 5

• Manufacturer Part Number: ssm6l12tu
• Description: Toshiba Field Effect Transistor Silicon P/n Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1(Nch MOS FET)
1000
100
10
10
1
0
10
0.1
-25°C
Drain-Source voltage VDS (V)
Drain current ID (mA)
100
25°C
1
C - VDS
|Yfs| - ID
Ta=100°C
Common Source
VDS=3V
Ta=25°C
1000
10
Common Source
VGS=0V
f=1MHz
Ta=25°C
Ciss
Coss
Crss
10000
100
5
1000
1600
1400
1200
1000
100
800
600
400
200
10
1
0
10
0
Common Source
VGS=0V
Ta=25°C
G
-0.2
toff
tf
tr
ton
S
D
Drain-Source voltage VDS (V)
IDR
Drain current ID (mA)
100
-0.4
IDR - VDS
Common Source
VDD=10V
VGS=0 ~ 2.5V
Ta=25°C
t - ID
-0.6
SSM6L12TU
1000
2007-11-01
-0.8
10000
-1