ssm3k14t TOSHIBA Semiconductor CORPORATION, ssm3k14t Datasheet - Page 2

• Manufacturer Part Number: ssm3k14t
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mosii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Precaution
(a) Test circuit
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Total gate charge
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note 3: Pulse test
this product. For normal switching operation, V
lower voltage than V
V
(relationship can be established as follows: V
Please take this into consideration for using the device.
4 V
th
0
can be expressed as voltage between gate and source when low operating current value is I
10 μs
Characteristic
IN
Rise time
Turn-on time
Fall time
Turn-off time
th
.
I
D
V
DD
(Ta = 25°C)
OUT
V
V
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
R
Symbol
(BR) DSS
(BR) DSX
DD
IN
DS (ON)
G
I
I
C
|Y
C
C
GSS
DSS
V
Qg
t
t
: t
= 10 Ω
on
off
oss
t
t
rss
iss
th
fs
r
f
= 15 V
r
, t
|
f
< 5 ns
GS (off)
GS (on)
V
I
I
V
V
V
I
I
I
V
V
V
V
V
V
D
D
D
D
D
GS
DS
DS
DS
DD
DS
DS
DS
DD
GS
= 1 mA, V
= 1 mA, V
= 2 A, V
= 2 A, V
= 2 A, V
2
= 30 V, V
= 5 V, I
= 5 V, I
= 15 V, V
= 15 V, V
= 15 V, V
= ±16 V, V
∼ − 24 V, I
= 15 V, I
= 0~4 V, R
< V
requires higher voltage than V
th
GS
GS
GS
(b) V
(c) V
Test Condition
D
D
< V
GS
GS
D
D
GS
= 0.1 mA
= 2 A
= 10 V
= 4.5 V
= 4.0 V
GS
GS
GS
= 2 A
DS
= 4 A, V
G
= 0
= −20 V
GS (on)
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
OUT
IN
= 10 Ω
= 0
GS
)
4 V
0
V
V
= 4 V
DD
DS (ON)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
Min
1.0
3.2
t
30
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10%
on
th
and V
t
r
Typ.
460
106
6.4
5.0
31
45
50
62
15
24
19
⎯
⎯
⎯
⎯
⎯
6
GS (off)
SSM3K14T
90%
t
D
off
2007-11-01
Max
= 100 μA for
2.5
±1
39
57
67
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
90%
requires
t
f
10%
Unit
mΩ
μA
nC
μA
pF
pF
pF
ns
V
V
S