ssm3k14t TOSHIBA Semiconductor CORPORATION, ssm3k14t Datasheet - Page 5

• Manufacturer Part Number: ssm3k14t
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mosii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.01
0.1
10
1
0.1
I D max (pulsed)
I D max (continuous)
*: Single nonrepetitive Pulse
DC operation
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
Cu pad: 645 mm
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
Ta = 25°C
Drain-Source voltage V
1000
100
10
0.001
Safe operating area
1
1
2
)
10 s*
0.01
10 ms*
V DSS max
10
DS
(V)
1 ms*
0.1
100
Pulse width tw (s)
r
th
– tw
1
5
1.25
0.75
0.25
1.5
0.5
1
0
0
10
t = 10 s
DC
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
Cu pad: 645 mm
25
Ambient temperature Ta (°C)
100
50
2
)
P
D
75
– Ta
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
Cu pad: 645 mm
1000
100
2
125
)
SSM3K14T
2007-11-01
150