ssm3j108tu TOSHIBA Semiconductor CORPORATION, ssm3j108tu Datasheet - Page 3

• Manufacturer Part Number: ssm3j108tu
• Description: Field Effect Transistor Silicon P-channel Mos Type High Speed Switching Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

300
250
200
150
100
400
350
300
250
200
150
100
50
50
-5
-4
-3
-2
-1
-0
0
0
-0.0
-0
-0
ID=-0.1A
-1
-0.2
Gate-Source voltage VGS (V)
Drain-Source voltage VDS (V)
-2
-1
-0.8A
VGS=-4V
-3
Drain current ID (A)
-0.4A
VGS=-1.2V
-1.8V
-2.5V
-10
RDS(ON) - ID
RDS(ON) - VGS
-0.4
-4
-2
ID - VDS
-1.5
-5
-1.8
-4.0
-2.5
Common Source
Ta=25°C
-0.6
Common Source
Ta=25°C
-6
Common Source
Ta=25°C
-3
-7
-0.8
-8
-4
-9 -10
-1.0
-5
3
0.0001
0.001
0.01
400
350
300
250
200
150
100
0.1
-0.8
-0.6
-0.4
-0.2
10
50
1
0
-1
-0
-60 -40 -20
0
-60 -40 -20 0
Common Source
Ambient temperature Ta( ℃ )
Gate-Source voltage VGS (V)
Ambient temperature Ta(°C)
0
Ta=85°C
RDS(ON) - Ta
20 40 60 80 100 120 140 160
20 40 60 80 100 120 140 160
VGS=-4V,ID=-0.8A
ID - VGS
Vth - Ta
-25°C
1
-1.8V,-0.1A
-2.5V,-0.4A
25°C
Common Source
ID=-1mA
VDS=-3V
Common Source
VDS=-3V
SSM3J108TU
2007-11-01
2