2sd2686 TOSHIBA Semiconductor CORPORATION, 2sd2686 Datasheet

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2sd2686

Manufacturer Part Number
2sd2686
Description
Toshiba Transistor Silicon Npn Epitaxial Type Darlington Power
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Solenoid Drive Applications
Motor Drive Applications
Absolute Maximum Ratings
Equivalent Circuit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area,
Note 2: Using continuously under heavy loads (e.g. the application of
High DC current gain: h
Zener diode included between collector and base
Base
645 mm
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristic
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power)
2
)
≒ 5kΩ
t = 10 s
Pulse
FE
DC
DC
= 2000 (min) (V
≒ 300Ω
(Ta = 25°C)
P
Symbol
C
V
V
V
T
I
CBO
CEO
EBO
I
CP
I
(Note 1)
T
Collector
Emitter
stg
C
B
2SD2686
j
CE
= 2 A, I
−55 to 150
Rating
60±10
C
150
0.5
1.0
2.5
50
= 1 A)
8
1
3
1
Unit
°C
°C
W
V
V
V
A
A
Weight: 0.05 g (typ.)
JEDEC
JEITA
TOSHIBA
2-5K1A
SC-62
2006-11-21
2SD2686
Unit: mm

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2sd2686 Summary of contents

Page 1

... (Ta = 25°C) Symbol Rating Unit CBO V 60±10 V CEO EBO 0 1.0 P (Note 2.5 T 150 °C j −55 to 150 T °C stg Collector Emitter 1 2SD2686 Unit: mm JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 2006-11-21 ...

Page 2

... (sat See Figure 1 circuit diagram. t stg ∼ − Ω Marking 3 Output Lot No. 2 2SD2686 Min Typ. Max Unit ⎯ ⎯ μA 10 ⎯ ⎯ μA 10 ⎯ 0.80 4 ⎯ ⎯ 2000 ⎯ ...

Page 3

... Ta = 100° (V) 2.4 2.0 1.6 1.2 1.0 0.5 0.8 0.1 0 0.1 0 −55°C 25 100 1 0.5 0 0.1 3 2SD2686 I – Common emitter −55 25 0.8 1.6 2.4 3.2 Base-emitter voltage V ( – Common emitter Ta = 25°C 2 3.0 A 2.0 1 100 300 500 Base current I (mA – I ...

Page 4

... Collector-emitter voltage V ( – Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick area, 645 Pulse width t ( ms* 100 4 2SD2686 100 1000 2006-11-21 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SD2686 20070701-EN 2006-11-21 ...

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