2sd2719 TOSHIBA Semiconductor CORPORATION, 2sd2719 Datasheet - Page 3

• Manufacturer Part Number: 2sd2719
• Description: Toshiba Transistor Silicon Npn Epitaxial Type Darlington Power
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
5000
1000
3000
500
300
100
3.2
2.4
1.6
0.8
2.4
2.0
1.6
1.2
0.8
0.4
0.03
0
0
0.1
0
Common emitter
V CE = 2 V
0.05
0.1
0.3
Ta = 100°C
Collector-emitter voltage V
1.0
0.5
3
0.1
1.5
2
Collector current I
1
Base current I
2.0
1
2.5
0.3
3
I
V
h
C
4
25
FE
CE
0.5
– V
−55
0.5
– I
– I
10
CE
I B = 0.18 mA
C
B
B
1
C
I C = 3.0 A
(mA)
30
6
0.3
0.20
0.22
Common emitter
Ta = 25°C
Common emitter
Ta = 25°C
CE
(A)
100
3
(V)
5
8
300
10
3
0.5
0.3
0.8
0.3
10
3.2
2.4
1.6
0.5
10
5
3
1
5
3
1
0
0.1
0.1
0
−55
25
Ta = 100°C
−55
Ta =100°C
25
Ta = 100℃
Base-emitter voltage V
0.8
Collector current I
Collector current I
25
V
V
CE (sat)
BE (sat)
I
1.6
C
– V
1
1
− 55
BE
– I
– I
C
C
C
C
2.4
BE
Common emitter
I C /I B = 500
Common emitter
I C /I B = 500
(A)
Common emitter
V CE = 2 V
(A)
(V)
3.2
2007-06-07
2SD2719
10
10