am41dl16x4d Meet Spansion Inc., am41dl16x4d Datasheet - Page 25

• Manufacturer Part Number: am41dl16x4d
• Description: Stacked Multi-chip Package Mcp Flash Memory And Sram Am29dl16xd 16 Megabit 2 M X 8-bit/1 M X 16-bit Cmos 3.0 Volt-only, Simultaneous Operation Flash Memory And 4 Mbit 512 K X 8-bit/256 K X 16-bit Static Ram
• Manufacturer: Meet Spansion Inc.

24
(Word Mode)
(Word Mode)
Addresses
Addresses
1Ch
1Dh
2Ch
2Dh
3Ch
1Bh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
2Ah
2Bh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
000Ah
003Eh
0027h
0036h
0000h
0000h
0004h
0000h
0000h
0005h
0000h
0004h
0000h
0016h
0002h
0000h
0000h
0000h
0002h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Data
Data
Table 14. Device Geometry Definition
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
Table 13. System Interface String
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
P R E L I M I N A R Y
Am41DL16x4D
N
byte
PP
PP
N
pin present)
times typical
pin present)
N
N
times typical (00h = not supported)
N
Description
times typical
Description
ms (00h = not supported)
N
N
N
times typical
N
N
µ
s (00h = not supported)
ms
µs