k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 14

• Manufacturer Part Number: k4t1g084qe
• Description: 1gb E-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

7.6 Differential input AC logic Level
Note :
1. V
2. The typical value of V
3. For information related to V
7.7 Differential AC output parameters
Note :
1. The typical value of V
8.0 ODT DC electrical characteristics
Note : Test condition for Rtt measurements
Measurement Definition for Rtt(eff): Apply V
V
Measurement Definition for V
K4T1G084QE
K4T1G164QE
K4T1G044QE
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm
Deviation of VM with respect to V
IH
and V
indicates the voltage at which differential input signals must cross.
tude allowed for overshoot and undershoot.
V
ID
(AC), V
V
OX
Symbol
Symbol
V
V
(AC) specifies the input differential voltage |V
OX
ID
IX
(AC) indicates the voltage at which differential output signals must cross.
(AC)
(AC)
CP
(AC)
IL
is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V
(AC)(DC), and V
AC differential cross point voltage
IX
OX
(AC) is expected to be about 0.5 * V
(AC) is expected to be about 0.5 * V
AC differential cross point voltage
PARAMETER/CONDITION
M
DDQ
PEAK
AC differential input voltage
: Measure voltage (V
V
DDQ
V
values defined in SSTL_18
value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak ampli-
CP
TR
/2
delta VM =
Parameter
Parameter
Rtt(eff) =
IH
(AC) and V
TR
M
) at test pin (midpoint) with no load.
-V
I(
< Differential signal levels >
2 x VM
V
V
CP
V
IH
DDQ
IH
IL
(AC)
| required for switching, where V
(AC)
(AC) to test pin separately, then measure current I(V
DDQ
DDQ
) - I(
-
- 1
of the transmitting device and V
V
V
V
of the transmitting device and V
IL
V
14 of 45
IL
DDQ
SSQ
V
(AC)
(AC)
ID
x 100%
0.5 * V
0.5 * V
)
DDQ
DDQ
Min.
Min.
0.5
SYMBOL
delta VM
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
- 0.175
- 0.125
TR
V
is the true input signal (such as CK, DQS, LDQS or UDQS)
IX or
IX
(AC) is expected to track variations in V
OX
Crossing point
(AC) is expected to track variations in V
V
MIN
120
60
40
- 6
OX
0.5 * V
0.5 * V
V
DDQ
DDQ
Max.
Max.
IH
NOM
DDQ
150
Rev. 1.1 December 2008
75
50
(AC)) and I( V
+ 0.175
IH
+ 0.125
(AC) - V
DDR2 SDRAM
MAX
180
+ 6
90
60
IL
(AC).
IL
(AC)) respectively.
UNITS
Units
Units
ohm
ohm
ohm
V
V
V
%
DDQ
DDQ
NOTES
. V
Notes
Note
IX
1
1
1
1
.
1
2
1
(AC)