k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 33

• Manufacturer Part Number: k4t1g084qe
• Description: 1gb E-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QE
K4T1G164QE
K4T1G044QE
DQS
Note1
V
V
V
V
Hold Slew Rate
V
V
Note : DQS signal must be monotonic between V
Rising Signal
IL
IL
REF
DDQ
IH
IH
(DC)max
(AC)max
(AC)min
(DC)min
Figure 12 - IIIustration of tangent line for tDH (single-ended DQS)
(DC)
V
V
V
V
V
V
V
DDQ
IH
IH
REF
IL
IL
SS
(DC)max
(AC)max
(AC)min
(DC)min
V
(DC)
SS
=
dc to V
dc to V
region
region
tangent line [ V
REF
REF
∆TR
tDS
REF
tangent
line
(DC) - V
33 of 45
tDH
IL
Hold Slew Rate
Falling Signal
(DC)max ]
∆TR
IL
(DC)max and V
nominal
line
=
tangent line [ V
tDS
IH
tangent
(DC)min.
line
tDH
∆TF
IH
∆TF
(DC)min - V
nominal
line
Rev. 1.1 December 2008
DDR2 SDRAM
REF
(DC) ]