k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 31

• Manufacturer Part Number: k4t1g084qe
• Description: 1gb E-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QE
K4T1G164QE
K4T1G044QE
DQS
Note1
V
V
V
V
Note : DQS signal must be monotonic between V
V
V
IL
IL
REF
DDQ
IH
IH
(DC)max
(AC)max
Hold Slew Rate
(AC)min
(DC)min
Rising Signal
Figure 10 - IIIustration of nominal slew rate for tDH (single-ended DQS)
(DC)
V
V
V
V
V
V
V
DDQ
IH
IH
IL
IL
SS
REF
V
(DC)max
(AC)max
(AC)min
(DC)min
SS
(DC)
dc to V
dc to V
region
region
=
V
REF
REF
REF
(DC) - V
∆TR
slew rate
nominal
tDS
IL
(DC)max
31 of 45
tDH
IL
∆TR
(DC)max and V
Hold Slew Rate
Falling Signal
tDS
nominal
slew rate
IH
=
(DC)min.
V
IH
(DC)min - V
tDH
∆TF
∆TF
Rev. 1.1 December 2008
REF
(DC)
DDR2 SDRAM