k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 6

• Manufacturer Part Number: k4t1g084qe
• Description: 1gb E-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QE
K4T1G164QE
K4T1G044QE
Note :
1. Pins B3 and A2 have identical capacitances as pins B7 and A8.
2. For a Read, when enabled, strobe pair RDQS & RDQS are identical in function and timing to strobe pair DQS & DQS and
3. The function of DM or RDQS/RDQS is enabled by EMRS command.
4. V
input data masking function is disabled.
V
DDL
SS
, and V
and V
G
A
B
C
D
E
F
H
K
L
J
SSQ
SSDL
3.2 x8 package pinout (Top View) : 60ball FBGA Package
Top view
(See the balls through package)
.
Ball Locations (x8)
V
V
DQ6
DQ4
BA2
V
V
V
are power and ground for the DLL. It is recommended that they be isolated on the device from V
DDQ
DDL
1
DD
SS
DD
Populated ball
Ball not populated
NU/RDQS
A10/AP
V
V
V
CKE
DQ1
BA0
A12
A3
A7
SSQ
SSQ
REF
2
DM/RDQS
V
DQ3
BA1
V
V
WE
NC
A1
A5
A9
DDQ
3
SS
SS
6 of 45
4
5
A
B
C
D
E
G
H
K
F
J
L
6
1
V
V
V
DQS
DQ2
RAS
CAS
A11
SSDL
NC
2
A2
A6
SSQ
DDQ
7
3
4
V
V
DQS
DQ0
5
A13
CK
CK
CS
A0
A4
A8
SSQ
SSQ
8
6
7
8
ODT0
V
V
DQ7
DQ5
V
V
V
DDQ
DDQ
Rev. 1.1 December 2008
9
DD
DD
SS
9
DDR2 SDRAM
DD
,V
DDQ
,