k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 39

• Manufacturer Part Number: k4t1g084qe
• Description: 1gb E-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QE
K4T1G164QE
K4T1G044QE
Hold Slew Rate
V
V
V
V
V
V
Rising Signal
DDQ
IH
IH
REF
IL
IL
(DC)max
(AC)max
(AC)min
(DC)min
(DC)
CK
CK
V
SS
=
dc to V
dc to V
region
region
tangent line [ V
Figure 16 - IIIustration of tangent line for tIH
REF
REF
∆TR
tIS
tangent
REF
line
(DC) - V
39 of 45
Hold Slew Rate
Falling Signal
tIH
IL
(DC)max ]
∆TR
=
nominal
tangent line [ V
line
tIS
tangent
∆TF
line
IH
tIH
(DC)min - V
∆TF
nominal
line
Rev. 1.1 December 2008
REF
(DC)]
DDR2 SDRAM