k4t51043qb-gce6 Samsung Semiconductor, Inc., k4t51043qb-gce6 Datasheet - Page 22

• Manufacturer Part Number: k4t51043qb-gce6
• Description: 512mb B-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

512Mb B-die DDR2 SDRAM
Output Buffer Levels
Output AC Test Conditions
Output DC Current Drive
OCD default characteristics
Note 1: Absolute Specifications (0°C ≤
Note 2: Impedance measurement condition for output source dc current: VDDQ = 1.7V; VOUT = 1420mV;
Note 3: Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and
Note 4: Slew rate measured from vil(ac) to vih(ac).
Note 5: The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew
1.
2.
3.
4.
size for OCD calibration
Output impedance step
1. The VDDQ of the device under test is referenced.
Pull-up and pull-down
Description
Symbol
Symbol
I
I
V
Output impedance
OH(dc)
OL(dc)
V
V
voltage.
rate as measured from AC to AC. This is guaranteed by design and characterization.
V
mV.
V
The dc value of V
The values of I
capability to ensure V
actual current values are derived by shifting the desired driver operating point (see Section 3.3) along a 21 ohm load line to define
a convenient driver current for measurement.
Output slew rate
OTR
(VOUT-VDDQ)/Ioh must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ-280mV.
Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV; VOUT/Iol
must be less than 23.4 ohms for values of VOUT between 0V and 280mV.
OH
OL
DDQ
DDQ
mismatch
= 1.7 V; V
= 1.7 V; V
Minimum Required Output Pull-up under AC Test Load
Maximum Required Output Pull-down under AC Test Load
Output Timing Measurement Reference Level
Output Minimum Source DC Current
Output Minimum Sink DC Current
OH(dc)
OUT
OUT
REF
= 1420 mV. (V
= 280 mV. V
and I
IH
applied to the receiving device is set to V
min plus a noise margin and V
OL(dc)
Parameter
are based on the conditions given in Notes 1 and 2. They are used to test device drive current
OUT
Parameter
Parameter
OUT
/I
OL
- V
must be less than 21 ohm for values of V
DDQ
T
CASE
)/I
Min
OH
12.6
tbd
≤ +tbd°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)
0
0
must be less than 21 ohm for values of V
Page 22 of 38
IL
max minus a noise margin are delivered to an SSTL_18 receiver. The
Nom
TT
18
Max
23.4
1.5
tbd
SSTL_18 Class II
SSTl_18 Class II
4
V
V
0.5 * V
TT
OUT
TT
- 13.4
13.4
+ 0.603
- 0.603
between 0 V and 280 mV.
DDQ
Unit
ohms
ohms
ohms
V/ns
OUT
between V
1,2
6
1,2,3
1,4,5
Rev. 0.91 (Sep. 2003)
DDR2 SDRAM
Notes
Units
Units
Preliminary
mA
mA
DDQ
V
V
V
and V
DDQ
1, 3, 4
2, 3, 4
Notes
Notes
1
- 280