k4t51043qb-gce6 Samsung Semiconductor, Inc., k4t51043qb-gce6 Datasheet - Page 23

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k4t51043qb-gce6

Manufacturer Part Number
k4t51043qb-gce6
Description
512mb B-die Ddr2 Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
512Mb B-die DDR2 SDRAM
Note 6 : This represents the step size when the OCD is near 18 ohms at nominal conditions across all
process and represents only the DRAM uncertainty. A 0 ohm value (no calibration) can only be achieved if the
OCD impedance is 18 ohms +/- 0.75 ohms under nominal conditions.
Output slew rate load :
Output
(V
OUT)
V
TT
25 ohms
Page 23 of 38
Reference
Point
Rev. 0.91 (Sep. 2003)
DDR2 SDRAM
Preliminary

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