k4s1g0732b Samsung Semiconductor, Inc., k4s1g0732b Datasheet - Page 10

• Manufacturer Part Number: k4s1g0732b
• Description: 32m X 8bit X 4 Banks Synchronous Dram
• Manufacturer: Samsung Semiconductor, Inc.

SDRAM stacked 1Gb B-die (x8)
I
I
IBIS SPECIFICATION
OH
OL
Voltage
Voltage
Characteristics (Pull-down)
Characteristics (Pull-up)
3.45
3.3
3.0
2.6
2.4
2.0
1.8
1.65
1.5
1.4
1.0
0.0
0.0
0.4
0.65
0.85
1.0
1.4
1.5
1.65
1.8
1.95
3.0
3.45
(V)
(V)
100MHz
133MHz
100MHz
133MHz
I (mA)
I (mA)
-21.1
-34.1
-58.7
-67.3
-73.0
-77.9
-80.8
-88.6
-93.0
27.5
41.8
51.6
58.0
70.7
72.9
75.4
77.0
77.6
80.3
81.4
Min
Min
0.0
0.0
100MHz
100MHz
133MHz
133Mhz
-129.2
-153.3
-197.0
-226.2
-248.0
-269.7
-284.3
-344.5
-502.4
I (mA)
I (mA)
107.5
133.8
151.2
187.7
194.4
202.5
208.6
212.0
219.6
222.6
Max
Max
-27.3
-74.1
70.2
-2.4
0.0
66MHz
66MHz
I (mA)
I (mA)
-13.3
-27.5
-35.5
-41.1
-47.9
-52.4
-72.5
-93.0
17.7
26.9
33.3
37.6
46.6
48.0
49.5
50.7
51.5
54.2
54.9
Min
Min
-0.7
-7.5
0.0
-100
-200
-300
-400
-500
-600
250
200
150
100
50
0
0
0
0
0.5
0.5
66MHz and 100/133MHz Pull-up
66MHz and 100MHz Pull-down
1
1
I
I
I
OH
OH
I
I
OH
I
OL
OL
OL
1.5
1.5
Voltage
Voltage
Min (100/133MHz)
Min (66MHz)
Min (100MHz)
Min (66MHz)
Max (66 and 100/133MHz)
Max (100MHz)
Rev. 1.1 February 2004
2
2
CMOS SDRAM
2.5
2.5
3
3
3.5
3.5