k4s1g0732b Samsung Semiconductor, Inc., k4s1g0732b Datasheet - Page 7

• Manufacturer Part Number: k4s1g0732b
• Description: 32m X 8bit X 4 Banks Synchronous Dram
• Manufacturer: Samsung Semiconductor, Inc.

DC CHARACTERISTICS
SDRAM stacked 1Gb B-die (x8)
(Recommended operating condition unless otherwise noted, T
Notes :
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S1G0732B-TC75
4. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC3
CC2
I
CC3
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
N
N
P
P
Burst length = 1
t
I
CKE
CKE & CLK
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE
CKE & CLK
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
I
Page burst
4banks Activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
≤
≤
≤
RC
RC
V
V
0.2V
IH
IH
IH
IH
(min)
IL
IL
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK
(min), CS ≥ V
(min), CLK
≤
≤
V
V
Test Condition
IL
IL
(max), t
(max), t
CC
CC
A
= 0 to 70°C)
= 10ns
= 10ns
≤
≤
IH
V
V
IH
IH
CC
CC
/V
IL
IL
(min), t
(min), t
(max), t
(max), t
IL
= ∞
= ∞
=V
DDQ
CC
CC
CC
CC
/V
= 10ns
= 10ns
SSQ
= ∞
= ∞
).
Rev. 1.1 February 2004
Version
130
220
110
-75
40
20
50
35
12
4
4
8
8
CMOS SDRAM
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2
3