k4s1g0732b Samsung Semiconductor, Inc., k4s1g0732b Datasheet - Page 6

• Manufacturer Part Number: k4s1g0732b
• Description: 32m X 8bit X 4 Banks Synchronous Dram
• Manufacturer: Samsung Semiconductor, Inc.

ABSOLUTE MAXIMUM RATINGS
SDRAM stacked 1Gb B-die (x8)
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
Notes :
CAPACITANCE
Clock
RAS, CAS, WE, DQM
Address
CS#, CKE#
DQ
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
0
~ DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V ≤ V
Parameter
7
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
Parameter
supply relative to Vss
Pin
(V
DD
IN
= 3.3V, T
≤ V
DDQ
V
DD
Symbol
.
A
V
V
V
V
= 23°C, f = 1MHz, V
, V
I
OH
OL
LI
IH
IL
DDQ
Symbol
C
C
V
C
V
Ccs
-0.3
C
Min
3.0
2.0
2.4
-10
Symbol
DD
ADD
OUT
CLK
IN
-
IN
T
, V
I
, V
P
STG
OS
REF
D
OUT
DDQ
SS
=1.4V ± 200 mV)
= 0V, T
A
Typ
3.3
3.0
0
Min
5.0
5.0
5.0
2.5
8.0
-
-
-
= 0 to 70°C)
V
DD
Max
3.6
0.8
0.4
-55 ~ +150
10
-1.0 ~ 4.6
-1.0 ~ 4.6
-
+0.3
Max
10.0
10.0
14.0
9.0
6.5
Value
50
2
Rev. 1.1 February 2004
Unit
uA
V
V
V
V
V
CMOS SDRAM
Unit
pF
pF
pF
pF
pF
I
OH
I
OL
Unit
mA
°C
W
V
V
Note
= -2mA
= 2mA
1
2
3
Note