k4s1g0732b Samsung Semiconductor, Inc., k4s1g0732b Datasheet - Page 5

• Manufacturer Part Number: k4s1g0732b
• Description: 32m X 8bit X 4 Banks Synchronous Dram
• Manufacturer: Samsung Semiconductor, Inc.

PIN CONFIGURATION (Top view)
SDRAM stacked 1Gb B-die (x8)
PIN FUNCTION DESCRIPTION
CLK
CS0~1
CKE0~1
A
BA
RAS
CAS
WE
DQM
DQ
V
V
0
DD
DDQ
~ A
0
0
/V
Pin
~ BA
~
/V
SS
7
12
SSQ
1
System clock
Chip select
Clock enable
Address
Bank select address
Row address strobe
Column address strobe
Write enable
Data input/output mask
Data input/output
Power supply/ground
Data output power/ground
Name
A10/AP
V
V
V
V
DQ0
DQ1
DQ2
DQ3
CAS
RAS
CS1
CS0
BA0
BA1
V
V
V
DDQ
N.C
N.C
DDQ
N.C
N.C
SSQ
SSQ
WE
A0
A1
A2
A3
DD
DD
DD
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
Row/column addresses are multiplexed on the same pins.
Row address : RA
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, t
Blocks data input when DQM active.
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
0
~ RA
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
12
SHZ
, Column address : CA
V
DQ7
V
N.C
DQ6
V
N.C
DQ5
V
N.C
DQ4
V
N.C
V
CKE1
DQM
CLK
CKE0
A12
A11
A9
A8
A7
A6
A5
A4
V
SS
SSQ
DDQ
SSQ
DDQ
SS
SS
after the clock and masks the output.
Input Function
0
Rev. 1.1 February 2004
~ CA
9,
CA
CMOS SDRAM
11
(0.8 mm Pin pitch)
(400mil x 875mil)
54Pin TSOP