mt18vddt12872phg-335 Micron Semiconductor Products, mt18vddt12872phg-335 Datasheet - Page 11
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mt18vddt12872phg-335
Manufacturer Part Number
mt18vddt12872phg-335
Description
1gb X72, Ecc, Pll 200-pin Ddr Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT18VDDT12872PHG-335.pdf
(28 pages)
Commands
Operation Truth Table, provide a general reference of
available commands. For a more detailed description
Table 8:
CKE is HIGH for all commands shown except SELF REFRESH
NOTE:
Table 9:
Used to mask write data; provided coincident with the corresponding data
pdf: 09005aef81697898/source: 09005aef8169786e
DD18C128x72PHG.fm - Rev. A 10/04 EN
NAME (FUNCTION)
NAME (FUNCTION)
DESELECT (NOP)
NO OPERATION (NOP)
ACTIVE (Select device bank and activate row)
READ (Select device bank and column, and start READ burst)
WRITE (Select device bank and column, and start WRITE burst)
BURST TERMINATE
PRECHARGE (Deactivate row in device bank or banks)
AUTO REFRESH or SELF REFRESH (Enter self refresh mode)
LOAD MODE REGISTER
Write Enable
Write Inhibit
1. DESELECT and NOP are functionally interchangeable.
2. BA0–BA1 provide device bank address and A0–A12 provide row address.
3. BA0–BA1 provide device bank address; A0–A9, A11 (1GB) provide column address; A10 HIGH enables the auto precharge
4. Applies only to read bursts with auto precharge disabled; this command is undefined (and should not be used) for READ
5. A10 LOW: BA0–BA1 determine which device bank is precharged. A10 HIGH: all device banks are precharged and BA0–
6. This command is AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW.
7. Internal refresh counter controls row addressing; all inputs and I/Os are "Don’t Care" except for CKE.
8. BA0–BA1 select either the mode register or the extended mode register (BA0 = 0, BA1 = 0 select the mode register;
Table 8, Commands Truth Table, and Table 9, DM
feature (nonpersistent), and A10 LOW disables the auto precharge feature.
bursts with auto precharge enabled and for WRITE bursts.
BA1 are "Don’t Care."
BA0 = 1, BA1 = 0 select extended mode register; other combinations of BA0–BA1 are reserved). A0–A12 provide the op-
code to be written to the selected mode register.
Commands Truth Table
DM Operation Truth Table
11
of commands and operations, refer to the Micron
512Mb DDR SDRAM component data sheets.
CS#
200-PIN DDR SDRAM SODIMM
H
L
L
L
L
L
L
L
L
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RAS# CAS#
X
H
H
H
H
L
L
L
L
H
H
H
H
X
L
L
L
L
1GB (x72, ECC, PLL)
WE#
X
H
H
H
H
L
L
L
L
©2004 Micron Technology, Inc. All rights reserved.
DM
H
L
Bank/Row
Bank/Col
Bank/Col
Op-Code
ADDR
Code
X
X
X
X
Valid
DQS
NOTES
X
6, 7
1
1
2
3
3
4
5
8