mt18vddt12872phg-335 Micron Semiconductor Products, mt18vddt12872phg-335 Datasheet - Page 26
![no-image](/images/no-image-200.jpg)
mt18vddt12872phg-335
Manufacturer Part Number
mt18vddt12872phg-335
Description
1gb X72, Ecc, Pll 200-pin Ddr Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT18VDDT12872PHG-335.pdf
(28 pages)
Table 20: Serial Presence- Detect Matrix
“1”/”0”: Serial Data, “driven to HIGH”/”driven to LOW”
pdf: 09005aef81697898/source: 09005aef8169786e
DD18C128x72PHG.fm - Rev. A 10/04 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
1
2
3
4
5
6
7
8
9
Number of Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Rows Addresses on Assembly
Number of Column Addresses on Assembly
Number of Physical Ranks on DIMM
Module Data With
Module Data With (Continued)
Moduel Voltage Interface Levels
SDRAM Cycle Time, (
(see note 1)
SDRAM Access from Clock,(
Module Configuration Type
Refresh Rate/Type
SDRAM Device Width (Primary SDRAM)
Error-checking SDRAM Data Width
Minimum Clock Delay, Back-to-Back Random Column
Access
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
(see note 1)
SDRAM Access from CK,
SDRAM Cycle Time,
SDRAM Access From CK,
Minimum Row Precharge Time,
Minimum Row to Row Active,
Minimum RAS# to CAS# Delay,
Minimum RAS# Pulse Width,
Module Rank Density
Address and Command Setup Time,
(see note 3)
t
t
t
CK, CAS Latency = 2
CK, CAS Latency = 1.5
CK), CAS Latency = 2.5
DESCRIPTION
t
t
AC, CAS Latency = 2
AC, CAS Latency = 1.5
t
AC), CAS Latency = 2.5
t
RAS (see note 2)
t
RRD
t
RCD (see note 4)
t
RP (see note 4)
t
IS
26
200-PIN DDR SDRAM SODIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Unbuffered/Diff. Clock
0.75ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
7.5ns (-335/-262/-26A)
15 ns (-262/-26A/-265)
45ns (-262/-26A/-265)
1ns (-262/-26A/-265)
ENTRY (VERSION)
Fast/Concurrent AP
20ns (-26A/-265)
20ns (-26A/-265)
7ns (-262/-26A)
SDRAM DDR
7.5ns( -265)
0.7ns (-335)
0.7ns (-335)
0.8ns (-335)
10ns (-265)
18ns (-335)
15ns (-262)
12ns (-335)
18ns (-335)
15ns (-262)
42ns (-335)
7.8µs/SELF
6ns (-335)
SSTL 2.5V
1 clock
512MB
2, 4, 8
2.5, 2
ECC
N/A
N/A
128
256
13
11
72
2
0
8
8
4
0
1
1GB (x72, ECC, PLL)
©2004 Micron Technology, Inc. All rights reserved.
MT18VDDT12872PH
0D
A0
2A
2D
A0
80
08
07
0B
02
48
00
04
60
70
75
70
75
02
82
08
08
01
0E
04
0C
01
02
24
C0
75
70
75
00
00
48
3C
50
30
3C
48
3C
50
80
80