mt8vddt6464hg-40b Micron Semiconductor Products, mt8vddt6464hg-40b Datasheet - Page 14

• Manufacturer Part Number: mt8vddt6464hg-40b
• Description: 256mb, 512mb X64, Sr Pc3200 200-pin Ddr Sodimm
• Manufacturer: Micron Semiconductor Products

Table 13: I
DDR SDRAM component values only
Notes: 1–5, 8, 10, 12, 47; notes appear on pages 17–19; 0°C
pdf: 09005aef80b577e4, source: 09005aef80921669
DDA8C32_64x64HG.fm - Rev. D 9/04 EN
PARAMETER/CONDITION
OPERATING CURRENT: One device bank; Active-Precharge;
t
clock cyle; Address and control inputs changing once every two clock cycles
OPERATING CURRENT: One device bank; Active -Read Precharge; Burst = 4;
t
changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks idle;
Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
CKE = HIGH; Address and other control inputs changing once per clock cycle.
V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank active; Power-
down mode;
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device bank;
Active-Precharge;
changing twice per clock cycle; Address and other control inputs changing
once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One device bank
active; Address and control inputs changing once per clock cycle;
(MIN); I
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device bank
active; Address and control inputs changing once per clock cycle;
(MIN); DQ, DM, and DQS inputs changing twice per clock cycle
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE
OPERATING CURRENT: Four device bank interleaving READs (BL = 4) with
auto precharge,
change only during Active READ or WRITE commands
RC =
RC =
IN
= V
t
t
RC (MIN);
RC (MIN);
REF
OUT
for DQ, DQS, and DM
= 0mA
t
CK =
DD
t
t
t
CK =
CK =
RC =
t
RC =
t
CK (MIN); CKE = LOW
t
Specifications and Conditions – 512MB
CK =
t
t
t
CK (MIN); DQ, DM and DQS inputs changing once per
CK (MIN); I
RC (MIN);
t
RAS (MAX);
t
CK (MIN); CKE = (LOW)
0.2V
t
CK =
OUT
t
CK =
= 0mA; Address and control inputs
t
CK (MIN); Address and control inputs
t
CK (MIN); DQ, DM andDQS inputs
t
t
REFC =
REFC = 7.8125µs
t
14
CK =
T
A
t
RFC (MIN)
256MB, 512MB (x64, SR) PC3200
+70°C; V
t
t
t
CK =
CK =
CK MIN;
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
CK
CK
DD
= V
SYMBOL
DD
I
I
I
I
I
I
I
DD4W
I
I
DD3N
I
DD5A
I
I
DD2P
DD3P
DD4R
DD2F
DD0
DD1
DD5
DD6
DD7
200-PIN DDR SODIMM
Q = +2.6V ±0.1V
MAX
1,240
1,480
1,520
1,560
2,760
3,600
-40B
440
360
440
40
88
40
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
©2004 Micron Technology, Inc.
21, 28, 43
21, 28, 43
NOTES
20, 41
20, 41
20, 41
20, 41
24, 43
24, 43
20, 42
44
20
9