mt8vddt6464hg-40b Micron Semiconductor Products, mt8vddt6464hg-40b Datasheet - Page 17
![no-image](/images/no-image-200.jpg)
mt8vddt6464hg-40b
Manufacturer Part Number
mt8vddt6464hg-40b
Description
256mb, 512mb X64, Sr Pc3200 200-pin Ddr Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT8VDDT6464HG-40B.pdf
(26 pages)
Notes
pdf: 09005aef80b577e4, source: 09005aef80921669
DDA8C32_64x64HG.fm - Rev. D 9/04 EN
10. I
11. This parameter is sampled. V
1. All voltages referenced to V
2. Tests for AC timing, I
3. Outputs measured with equivalent load:
4. AC timing and I
5. The AC and DC input level specifications are as
6. V
7. V
8. I
9. Enables on-chip refresh and address counters.
characteristics may be conducted at nominal ref-
erence/supply voltage levels, but the related spec-
ifications and device operation are guaranteed for
the full voltage range specified.
swing of up to 1.5V in the test environment, but
input timing is still referenced to V
crossing point for CK/CK#), and parameter speci-
fications are guaranteed for the specified AC input
levels under normal use conditions. The mini-
mum slew rate for the input signals used to test
the device is 1V/ns in the range between V
and V
defined in the SSTL_2 Standard (i.e., the receiver
will effectively switch as a result of the signal
crossing the AC input level, and will remain in that
state as long as the signal does not ring back
above [below] the DC input LOW [HIGH] level).
ting device and to track variations in the DC level
of the same. Peak-to-peak noise (non-common
mode) on V
DC value. Thus, from V
±25mV for DC error and an additional ±25mV for
AC noise. This measurement is to be taken at the
nearest V
system supply for signal termination resistors, is
expected to be set equal to V
variations in the DC level of V
rates. Specified values are obtained with mini-
mum cycle time at CL = 3 for -40B with the out-
puts open.
properly initialized, and is averaged at the defined
cycle rate.
V
25°C, V
DD
DD
REF
TT
DD
Q = +2.5V ±0.2V, V
is not applied directly to the device. V
is dependent on output loading and cycle
specifications are tested after the device is
is expected to equal V
IH
OUT
(AC).
REF
Output
(V
(DC) = V
REF
by-pass capacitor.
OUT
may not exceed ±2 percent of the
)
DD
DD
V
DD
tests may use a V
TT
REF
Q/2, V
50
30pF
, and electrical AC and DC
Reference
Point
DD
= V
SS
DD
Q/2, V
.
SS
OUT
REF
Q/2 of the transmit-
REF
, f = 100 MHz, T
DD
.
(peak to peak) =
and must track
= +2.5V ±0.2V,
REF
REF
is allowed
(or to the
IL
IL
-to-V
TT
(ACV)
is a
A
IH
=
17
12. For slew rates < 1 V/ns and to 0.5 Vns. If the slew
13. The CK/CK# input reference level (for timing ref-
14. Inputs are not recognized as valid until V
15. The output timing reference level, as measured at
16. Transitions occur in the same access time win-
17. The intent of the Don’t Care state after completion
18. This is not a device limit. The device will operate
19. It is recommended that DQS be valid (HIGH or
20. MIN (
21. The refresh period is 64ms. This equates to an
256MB, 512MB (x64, SR) PC3200
0.2V. DM input is grouped with I/O pins, reflecting
the fact that they are matched in loading.
rate is < 0.5V/ns, timing must be derated:
an additional 50ps per each 100 mV/ns reduction
in slew rate from 500 mV/ns, while
fected. If the slew rate exceeds 4.5 V/ns, function-
ality is uncertain. For -40B, slew rates must be
0.5 V/ns.
erenced to CK/CK#) is the point at which CK and
CK# cross; the input reference level for signals
other than CK/CK# is V
lizes. Exception: during the period before V
stabilizes, CKE 0.3 x V
the timing reference point indicated in Note 3, is
V
dows as data valid transitions. These parameters
are not referenced to a specific voltage level, but
specify when the device output is no longer driv-
ing (
of the postamble is the DQS-driven signal should
either be HIGH, LOW, or high-Z and that any sig-
nal transition within the input switching region
must follow valid input requirements. If DQS tran-
sitions to HIGH above V
not transition to LOW below V
to
with a negative value, but system performance
could be degraded due to bus turnaround.
LOW) on or before the WRITE command. The
case shown (DQS going from high-Z to logic LOW)
applies when no WRITEs were previously in
progress on the bus. If a previous WRITE was in
progress, DQS could be HIGH during this time,
depending on
smallest multiple of
absolute value for the respective parameter.
(MAX) for I
ple of
value for
average refresh rate of 7.8125µs. However, an
AUTO REFRESH command must be asserted at
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TT
t
DQSH (MIN).
.
t
RPST,
t
RC or
t
CK that meets the maximum absolute
t
RAS.
t
DD
HZ) or begins driving (
200-PIN DDR SODIMM
t
t
RFC) for I
measurements is the largest multi-
DQSS.
t
CK that meets the minimum
REF
DD
IH
DD
Q is recognized as LOW.
.
(DC) MIN, then it must
measurements is the
IH
©2004 Micron Technology, Inc.
(DC) MIN prior
t
LZ).
t
IH is unaf-
REF
t
IS has
stabi-
t
RAS
REF