tpcp8403 TOSHIBA Semiconductor CORPORATION, tpcp8403 Datasheet - Page 2

• Manufacturer Part Number: tpcp8403
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mos Iv / U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Thermal resistance,
channel to ambient
(t = 5 s)
Thermal resistance,
channel to ambient
(t = 5 s)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
Note 4: P Channel: V
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: ● on the lower left of the marking indicates Pin 1.
b) The power dissipation and thermal resistance values shown are for a single device.
※ Weekly code (3 digits):
N Channel: V
(Note 2a) Single-device value at
(Note 2b) Single-device value at
(During single-device operation, power is only applied to one device.)
(During dual operation, power is evenly applied to both devices.)
Characteristics
Single-device operation
dual operation (Note 3b)
Single-device operation
dual operation (Note 3b)
DD
DD
25.4
(a)
-3.6
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
= 25 V, T
= 25 V, T
ch
ch
(Note 3a)
(Note 3a)
= 25°C (initial), L = 0.5 mH, R
= 25°C (initial), L = 0.5 mH, R
25.4 × 25.4 × 0.8
R
R
R
R
FR-4
th (ch-a) (1)
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
(Unit: mm)
Symbol
2
101.6
215.5
347.2
84.5
Max
(b) Device mounted on a glass-epoxy board (b)
G
G
°C/W
°C/W
Unit
= 25 Ω, I
= 25 Ω, I
AR
AR
(b)
= −3.4 A
= 4.7 A
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCP8403
2006-11-13