tpcp8403 TOSHIBA Semiconductor CORPORATION, tpcp8403 Datasheet - Page 9

• Manufacturer Part Number: tpcp8403
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mos Iv / U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

N-ch
10000
1000
100
100
2.0
1.5
1.0
0.5
80
10
60
40
20
0
0
0.1
−80
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
(3)
(4)
Drain−source voltage V
V GS = 4.5V
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
−40
40
V GS = 10V
Capacitance – V
1
0
R
80
DS (ON)
Device mounted on a glass-epoxy
board (a)
Device mounted on a glass-epoxy
board (b)
t = 5 s
P
(3) Single-device operation
(4) Single-device value at dual
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
D
operation
operation
– Ta
40
I D = 1.2,2.4,4.7A
– Ta
120
10
DS
80
I D = 1.2,2.4,4.7A
DS
Common source
Tc = 25°C
Pulse test
160
(V)
120
C iss
C oss
C rss
(Note 2a)
(Note 3b)
(Note 2b)
(Note 3a)
(Note 3b)
200
100
160
9
100
0.1
40
20
10
10
30
0
1
4
3
2
1
0
−80
0
0
Common source
Ta= 25℃
Pulse test
V DS
10
-0.2
Drain−source voltage V
−40
Ambient temperature Ta (°C)
Total gate charge Q
4
5
Dynamic input/output
-0.4
3
0
characteristics
I
8
DR
1
V
th
-0.6
– V
40
– Ta
V GS
16
DS
12
-0.8
V GS = 0,-1V
80
g
DS
Common source
V DS = 10 V
I D = 1mA
Pulse test
8
Common source
I D = 4.7 A
Ta = 25°C
Pulse test
(nC)
V DD = 32V
16
(V)
120
-1
TPCP8403
2006-11-13
-1.2
160
20
16
14
12
10
8
6
4
2
0