tpcp8404 TOSHIBA Semiconductor CORPORATION, tpcp8404 Datasheet - Page 4

• Manufacturer Part Number: tpcp8404
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mo/u-mos
• Manufacturer: TOSHIBA Semiconductor CORPORATION

N-ch
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty ≤ 1%, t
V
I
D
D
DR
GS
DS
DS
GS
GS
DS
DS
V
DD
= 10 mA, V
= 10 mA, V
GS
4
= 4 A, V
(Ta = 25°C)
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±20 V, V
= 4.5 V, I
= 10 V, I
≈ 24 V, V
10 V
0 V
Test Condition
Test Condition
GS
w
D
D
D
GS
GS
D
GS
GS
GS
= 10 μs
= 1 mA
= 2 A
DS
= 2 A
= 0 V
= 2 A
⎯
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
I
D
V
DD
= 2 A
≈ 15 V
D
= 4 A
V
OUT
Min
Min
1.3
30
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4
Typ.
Typ.
190
4.5
9.0
3.0
4.6
0.7
1.4
⎯
⎯
⎯
⎯
⎯
58
38
45
60
12
⎯
⎯
8
TPCP8404
2010-02-01
±100
Max
Max
−1.2
2.5
10
80
50
16
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
μA
nC
nA
pF
ns
V
V
S
A
V