tpcp8404 TOSHIBA Semiconductor CORPORATION, tpcp8404 Datasheet - Page 9

• Manufacturer Part Number: tpcp8404
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mo/u-mos
• Manufacturer: TOSHIBA Semiconductor CORPORATION

N-ch
1000
100
100
1.6
2.0
1.2
0.8
0.4
80
60
40
20
10
−80
0
1
0
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
(1)
(4)
(2)
(3)
V GS = 4.5 V
25
V GS = 10 V
Drain−source voltage V
−40
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
50
Capacitance – V
0
1
R
75
DS (ON)
Device mounted on a glass-epoxy
board (a)
Device mounted on a glass-epoxy
board (b)
t = 5 s
P
(3) Single-device operation
(4) Single-device value at dual
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
D
100
operation
40
operation
– Ta
– Ta
2
125
I D = 4 A
I D = 4, 2, 1 A
80
10
DS
DS
1
150
C iss
C oss
(V)
120
C rss
175
(Note 2a)
(Note 3b)
(Note 2b)
(Note 3a)
(Note 3b)
160
100
200
9
0.1
30
20
15
10
10
25
−80
5
1
3
2
1
0
0
0
0
V DD = 24 V
12
Common source
V DS = 10 V
I D = 1 mA
Pulse test
6
−0.2
10
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Total gate charge Q
V DS
2
Dynamic input/output
−0.4
4.5
0
characteristics
V DD = 6 V
I
DR
V
th
−0.6
– V
40
3
– Ta
4
V GS
DS
1
24
−0.8
80
Common source
I D = 4 A
Ta = 25°C
Pulse test
g
DS
Common source
Ta = 25°C
Pulse test
V GS = 0 V
12
(nC)
6
(V)
TPCP8404
−1.0
120
2010-02-01
−1.2
160
8
30
25
15
20
10
0
5