tpc8030 TOSHIBA Semiconductor CORPORATION, tpc8030 Datasheet
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tpc8030
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tpc8030 Summary of contents
Page 1
... V DGR ± GSS 1 1 0.053 150 °C ch −55 to 150 T °C stg 1 TPC8030 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.08 g (typ.) Circuit Configuration 2008-04-02 ...
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... Year of manufacture (The last digit of a year) Symbol Max Unit R 65.8 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm TPC8030 FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) 2008-04-02 ...
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... Duty 1 ≈ gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPC8030 Min Typ. Max = 0 V ⎯ ⎯ ± 100 = 0 V ⎯ ⎯ 10 ⎯ ⎯ 30 ⎯ ⎯ 5 ⎯ 1.3 2.5 ⎯ 11.5 17 ⎯ 7.5 ⎯ ⎯ ...
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... Drain-source voltage V 0.5 0.4 0.3 0.2 0 Gate − source voltage V 100 Common source Ta = 25°C Pulse test 10 1 100 0.1 4 TPC8030 I – 3.7 Common source Ta = 25°C Pulse test 6 3.6 3.5 3.4 3.3 3.2 3 =3.0 V 0.8 1.2 1 – Common source Ta = 25°C Pulse test ...
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... Ambient temperature Common source 25°C 40 Pulse test 160 0 C) ° 5 TPC8030 I – 4 Common source Ta = 25°C Pulse test −0.4 −0.6 −0.8 −1 −1.2 ( – ...
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... I D max (Pulse Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.1 0 Drain − source voltage V (V) DS − 0 Pulse width t (s) w 100 6 TPC8030 (2) (1) Single pulse 100 1000 2008-04-02 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8030 20070701-EN GENERAL 2008-04-02 ...