tpc8030 TOSHIBA Semiconductor CORPORATION, tpc8030 Datasheet - Page 5

• Manufacturer Part Number: tpc8030
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Iv
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
1.5
0.5
2.5
25
20
15
10
10
−80
3
2
1
0
5
0
0.1
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
V GS = 4.5 V
(1)
(2)
−40
Drain − source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
V GS = 10 V
Capacitance – V
0
1
R
DS (ON)
(1) Device mounted on a
(2) Device mounted on a
t = 10 s
P
D
glass-epoxy board (a) (Note 2a)
glass-epoxy board (b) (Note 2b)
40
80
– Ta
– Ta
I D = 5.5,11 A
80
10
DS
I D = 2.8,5.5,11 A
DS
120
°
°
C)
(V)
C)
120
C iss
C oss
C rss
2.8
160
100
160
5
100
2.5
1.5
0.5
40
30
10
50
20
10
−80
1
2
1
0
0
0
0
Common source
V DS = 10 V
I D = 1mA
Pulse test
V DS
Common source
I D = 11 A
Ta = 25°C
Pulse test
−0.2
Drain − source voltage V
−40
Ambient temperature Ta (
10
Total gate charge Q
10
Dynamic input/output
−0.4
0
characteristics
4.5
I
DR
V
12
V GS
th
−0.6
– V
40
20
– Ta
3
DS
6
−0.8
V DD =24 V
80
g
Common source
Ta = 25°C
Pulse test
DS
1
(nC)
30
V GS = 0 V
°
(V)
120
C)
−1
2008-04-02
TPC8030
−1.2
160
40
20
16
12
8
4
0