tpc8051-h TOSHIBA Semiconductor CORPORATION, tpc8051-h Datasheet - Page 3

• Manufacturer Part Number: tpc8051-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Peak forward current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
Q
I
I
C
C
|Y
C
Q
GSS
DSS
V
I
t
t
Q
DSF
rg
FP
oss
on
off
gs1
SW
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
Duty ≤ 1%, t
V
V
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DS
DD
DD
DD
= 10 mA, V
= 10 mA, V
GS
3
= 13 A, V
(Ta = 25°C)
= ±20 V, V
= 80 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
= 10 V, V
≈ 64 V, V
≈ 64 V, V
≈ 64 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
D
GS
GS
GS
GS
GS
GS
= 10 μs
= 1.0 mA
= 6.5 A
DS
= 6.5 A
= 6.5 A
⎯
= 0 V
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 10 V, I
= 5 V, I
= 10 V, I
= 0 V
I
D
V
= 6.5 A
DD
D
≈ 40 V
D
D
= 13 A
= 13 A
= 13 A
V
OUT
22.5
Min
Min
1.3
80
60
⎯
⎯
⎯
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⎯
⎯
⎯
⎯
⎯
⎯
⎯
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5800
Typ.
Typ.
150
520
6.7
6.3
1.0
3.4
6.7
45
14
67
85
43
14
10
16
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPC8051-H
2009-06-19
±100
7540
10.1
−1.2
Max
Max
210
2.3
9.7
1.5
10
52
⎯
⎯
⎯
⎯
⎯
⎯
⎯
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⎯
⎯
Unit
Unit
mΩ
nC
nA
μA
pF
ns
Ω
V
V
S
A
V