tpc8051-h TOSHIBA Semiconductor CORPORATION, tpc8051-h Datasheet - Page 5

• Manufacturer Part Number: tpc8051-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
1.6
1.2
0.8
0.4
16
12
10
−80
8
4
0
2
0
0.1
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(2)
V GS = 4.5 V
(1)
−40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
V GS = 10 V
40
Capacitance – V
0
1
R
DS (ON)
(1) Device mounted on a glass-epoxy
(2) Device mounted on a glass-epoxy
t=10s
P
I D = 3.3, 6.5, 13 A
board (a) (Note 2a)
board (b) (Note 2b)
D
40
80
– Ta
– Ta
I D = 3.3, 6.5, 13 A
80
10
DS
DS
120
°
(V)
C)
120
°
C rss
C)
C oss
C iss
160
100
160
5
100
100
2.5
1.5
0.5
0.1
80
60
40
20
10
−80
2
1
0
0
1
0
0
16
Common source
V DS = 10 V
I D = 1 mA
Pulse test
32
V DS = 64 V
10
−0.2
−40
Drain-source voltage V
Ambient temperature Ta (
3
Total gate charge Q
40
2
Dynamic input/output
−0.4
0
characteristics
V GS
4.5
I
16
DR
1
V
th
V DD = 64 V
−0.6
– V
40
80
– Ta
DS
V GS = 0 V
32
−0.8
80
g
Common source
Ta = 25°C
Pulse test
DS
Common source
I D = 13 A
Ta = 25°C
Pulse test
120
(nC)
°
(V)
120
TPC8051-H
−1.0
C)
2009-06-19
−1.2
160
160
20
16
8
12
4
0