tpc8a06-h TOSHIBA Semiconductor CORPORATION, tpc8a06-h Datasheet - Page 3

• Manufacturer Part Number: tpc8a06-h
• Description: Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Peak forward current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
Q
I
I
C
C
|Y
C
Q
GSS
DSS
V
I
t
t
Q
DSF
rg
FP
oss
on
off
gs1
SW
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
Duty ≤ 1%, t
V
V
V
I
I
D
D
DR
DR
V
GS
DS
DS
GS
GS
DS
DS
DS
DD
DD
DD
= 10 mA, V
= 10 mA, V
GS
3
= 1 A, V
= 12 A, V
(Ta = 25°C)
= ±20 V, V
= 30 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
= 10 V, V
≈ 24 V, V
≈ 24 V, V
≈ 24 V, V
10 V
0 V
Test Condition
Test Condition
GS
w
D
D
D
GS
GS
GS
D
GS
GS
GS
GS
GS
GS
= 10 μs
= 1 mA
= 6 A
DS
= 6 A
= 0 V
= 6 A
⎯
= 0 V
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 0 V, f = 5 MHz
= 10 V, I
= 5 V, I
= 10 V, I
= 0 V
I
D
V
= 6 A
DD
D
≈ 15 V
D
D
= 12 A
= 12 A
= 12 A
V
OUT
Min
Min
1.3
30
15
19
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1400
Typ.
Typ.
−0.4
380
9.2
7.2
1.6
2.4
8.6
3.5
9.6
4.6
2.5
4.5
37
54
22
19
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPC8A06-H
2009-06-05
±100
1800
12.9
10.1
−0.6
−1.2
Max
Max
100
2.3
2.4
80
48
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
nA
μA
pF
ns
Ω
V
V
S
A
V
V