tpc8a06-h TOSHIBA Semiconductor CORPORATION, tpc8a06-h Datasheet - Page 5

• Manufacturer Part Number: tpc8a06-h
• Description: Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
1.5
1.0
2.0
0.5
24
20
16
12
10
−80
8
4
0
0
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
(2)
(1)
V GS = 4.5 V
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
40
V GS = 10 V
Capacitance − V
0
1
R
(1) Device mounted on a glass-epoxy
(2) Device mounted on a glass-epoxy
DS (ON)
P
board (a) (Note 2a)
board (b) (Note 2b)
t = 10s
D
80
40
– Ta
I D = 3, 6, 12 A
− Ta
80
10
DS
DS
120
I D = 3, 6, 12 A
(V)
120
C iss
C oss
C rss
160
160
100
5
100
2.5
2.0
1.5
1.0
0.5
10
30
20
10
1
−80
0
0
0
0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
−40
V DS
Drain-source voltage V
Ambient temperature Ta (°C)
−0.2
Total gate charge Q
4
10
Dynamic input/output
0
3
characteristics
−0.4
I
8
DR
V
V DD = 6 V
4.5
th
− V
40
− Ta
1
DS
−0.6
12
24
80
g
DS
V GS = 0 V
Common source
Ta = 25°C
Pulse test
Common source
I D = 12 A
Ta = 25°C
Pulse test
(nC)
−0.8
16
TPC8A06-H
(V)
120
12
2009-06-05
−1.0
160
20
12
8
4
0