tpca8015-h TOSHIBA Semiconductor CORPORATION, tpca8015-h Datasheet - Page 3

• Manufacturer Part Number: tpca8015-h
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
R
t
t
Q
DSF
oss
on
off
gs1
SW
t
t
iss
rss
gd
th
fs
r
f
g
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
V
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
DD
DD
= 10 mA, V
= 10 mA, V
GS
3
= 35 A, V
(Ta = 25°C)
= ±16 V, V
= 40 V, V
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, V
∼ − 32 V, V
∼ − 32 V, V
∼ − 32 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
D
GS
GS
= 10 μs
GS
GS
GS
= 1 mA
= 17.5 A
DS
= 17.5 A
= 17.5 A
⎯
= 0 V
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 5 V, I
= 10 V, I
= 0 V
I
D
V
= 17.5A
DD
D
D
D
∼ − 20 V
= 35 A
= 35 A
= 35 A
V
OUT
Min
Min
1.1
40
25
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2155
Typ.
Typ.
200
780
4.4
6.1
1.4
60
12
10
48
37
21
13
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCA8015-H
5
7
9
2006-01-17
−1.2
Max
Max
±10
105
2.3
5.4
7.9
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
Ω
ns
V
V
S
A
V