tpca8015-h TOSHIBA Semiconductor CORPORATION, tpca8015-h Datasheet - Page 5

• Manufacturer Part Number: tpca8015-h
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
12
10
40
30
20
10
10
8
6
4
2
0
0
−80
0.1
0
Common source
V
f = 1 MHz
Ta = 25°C
V GS = 4.5 V
Common source
V GS = 10 V
GS
Pulse test
= 0 V
−40
Drain-source voltage V
Ambient temperature Ta (
V DS
Total gate charge Q
10
Dynamic input/output
Capacitance – V
0
1
characteristics
R
DS (ON)
20
40
V DD = 32 V
– Ta
I D = 9A,18A,35A
18A
g
80
10
DS
DS
C oss
C iss
C rss
Common source
I
Ta = 25°C
Pulse test
D
(nC)
I D = 35A
30
= 35 A
V GS
°
(V)
C)
120
9A
160
100
40
16
12
8
4
0
5
1000
100
0.1
2.5
1.5
0.5
10
1
−80
2
1
0
0
Common source
Common source
V
I
Pulse test
D
DS
= 1 mA
Ta = 25°C
Pulse test
= 10 V
−40
Drain-source voltage V
Ambient temperature Ta (
−0.2
0
−0.4
I
DR
V
10
th
– V
40
– Ta
4.5
DS
−0.6
80
TPCA8015-H
DS
3
−0.8
°
(V)
120
C)
2006-01-17
V
GS
1
= 0 V
160
−1