buk9219 NXP Semiconductors, buk9219 Datasheet - Page 6

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buk9219

Manufacturer Part Number
buk9219
Description
Buk9219-55a Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet

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Table 5:
T
Philips Semiconductors
9397 750 07642
Product specification
Symbol Parameter
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
ID
(A)
source-drain (diode forward) voltage I
reverse recovery time
recovered charge
Characteristics
300
250
200
150
100
50
0
R DSon
(m )
0
22
20
18
16
14
12
10
20
2
30
40
VGS (V) =
…continued
4
50
8
V GS (V) =
3.4
60
6
70
10
8
80
V DS (V)
3.6
5
03nb61
6
7
90
03nb62
9
Conditions
I
V
I D (A)
10
4.6
S
S
5.0
4
3
GS
2.2
4.0
Rev. 01 — 24 October 2000
4.2
= 25 A; V
= 20 A; dI
100
= 10 V; V
GS
S
/dt = 100 A/ s
= 0 V;
DS
Fig 6. On-state resistance: typical values.
Fig 8. Normalized drain source on-state resistance
= 30 V
T
j
Figure 15
a
= 25 C; I
=
factor as a function of junction temperature.
a
--------------------------- -
R
R DSON
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
DSon 25 C
(m )
2
1
0
R
-60
35
30
25
20
15
10
DSon
D
2
= 25 A
-20
20
4
TrenchMOS™ logic level FET
BUK9219-55A
60
© Philips Electronics N.V. 2000. All rights reserved.
6
Min
100
140
Typ
0.85
51
102
8
T j (
V GS (V)
03aa28
o
C)
03nb60
180
Max
1.2
10
6 of 13
Unit
V
ns
nC

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