buk9e2r4-40c NXP Semiconductors, buk9e2r4-40c Datasheet - Page 2

• Manufacturer Part Number: buk9e2r4-40c
• Description: N-channel Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK9E2R4-40C_1
Product data sheet
Pin
1
2
3
mb
Type number
BUK9E2R4-40C
Symbol Parameter
V
V
V
I
I
P
T
T
Avalanche ruggedness
E
E
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
DS(AL)R
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
non-repetitive
drain-source avalanche
energy
repetitive drain-source
avalanche energy
source current
peak source current
Pinning
Symbol
G
D
S
D
Ordering information
Limiting values
Package
Name
I2PAK
Description
gate
drain
source
mounting base;
connected to drain
Description
plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB
Conditions
T
R
T
V
V
T
T
I
V
see
T
t
D
p
j
mb
mb
mb
mb
GS
GS
GS
GS
≤ 10 μs; pulsed; T
≥ 25 °C; T
= 100 A; V
Figure 3
= 25 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 5 V; T
= 5 V; T
= 5 V; T
= 20 kΩ
j
j
j
j(init)
sup
Rev. 01 — 11 April 2008
= 100 °C; see
= 25 °C; see
≤ 175 °C
p
GS
≤ 10 μs; pulsed; see
≤ 40 V; R
= 25 °C; unclamped
Figure 2
= 5 V; see
mb
= 25 °C
Simplified outline
GS
Figure 1
Figure 1
Figure 1
= 50 Ω;
SOT226 (I2-PAK)
and
1
Figure 4
mb
2
4
3
N-channel TrenchMOS logic level FET
[2][3]
[2][3]
[4][5]
[2][3]
BUK9E2R4-40C
[1]
[6]
-15
-55
Min
-
-
-
-
-
-
-
-55
-
-
-
-
Graphic symbol
Max
40
40
15
270
100
100
1080
333
175
175
1.2
-
100
1080
mbb076
G
© NXP B.V. 2008. All rights reserved.
D
S
Version
SOT226
Unit
V
V
V
A
A
A
A
W
°C
°C
J
J
A
A
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