buk9e2r4-40c NXP Semiconductors, buk9e2r4-40c Datasheet - Page 8

• Manufacturer Part Number: buk9e2r4-40c
• Description: N-channel Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9E2R4-40C_1
Product data sheet
Fig 10. Sub-threshold drain current as a function of
Fig 12. Drain-source on-state resistance as a function
(A)
R
(mΩ)
10
10
10
10
10
10
I
D
DSon
-1
-2
-3
-4
-5
-6
6
5
4
3
2
1
T
T
gate-source voltage
of drain current; typical values
0
0
j
j
= 25 °C;V
= 25 °C
V
GS
(V) = 2.8
50
DS
= V
1
min
100
GS
3
typ
150
2
3.2
max
200
V
GS
03aa36
003aac265
I
(V)
D
(A)
10
3.6
3.8
250
3
Rev. 01 — 11 April 2008
Fig 11. Normalized drain-source on-state resistance
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
a
DSon
1.5
0.5
10
2
1
0
8
6
4
2
0
T
a =
factor as a function of junction temperature
of gate-source voltage; typical values
-60
0
j
= 25 °C; I
R
DSon ( 25°C )
R
N-channel TrenchMOS logic level FET
DSon
D
0
= 25 A
5
BUK9E2R4-40C
60
10
120
V
© NXP B.V. 2008. All rights reserved.
GS
003aac257
03aa27
T
(V)
j
( ° C)
180
15
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