buk7560-100a NXP Semiconductors, buk7560-100a Datasheet - Page 3

• Manufacturer Part Number: buk7560-100a
• Description: Trenchmos Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07807
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P
T
der
mb
function of mounting base temperature.
P der
= 25 C; I
(%)
=
----------------------
P
120
100
tot 25 C
80
60
40
20
P
0
tot
0
DM
25
single pulse.
100%
50
I D
10 -1
10 3
(A)
10 2
10
1
75
1
P
100
t p
125
T
R DSon = V DS / I D
150
T mb ( o C)
=
t p
T
t
175
03na19
Rev. 01 — 22 February 2001
200
BUK7560-100A; BUK7660-100A
10
D.C.
Fig 2. Normalized continuous drain current as a
V
I
der
GS
function of mounting base temperature.
I der
=
(%)
4.5 V
10 2
------------------ -
I
D 25 C
120
100
t p = 10 us
100 us
1 ms
10 ms
100 ms
80
60
40
20
I
0
D
0
25
100%
V DS (V)
TrenchMOS™ standard level FET
50
75
100
© Philips Electronics N.V. 2001. All rights reserved.
10 3
125
150
T mb ( o C)
175
03aa24
200
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