buk7560-100a NXP Semiconductors, buk7560-100a Datasheet - Page 5

• Manufacturer Part Number: buk7560-100a
• Description: Trenchmos Standard Level Fet
• Manufacturer: NXP Semiconductors

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 07807
Product specification
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
j
d
s
(BR)DSS
GS(th)
DSon
iss
oss
rss
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
I
Figure 9
V
V
V
Figure 7
V
f = 1 MHz;
V
V
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
from source lead to source
bond pad
D
D
DS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
j
j
j
j
j
j
j
j
j
= 100 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 20 V; V
= 10 V; I
= 25 C
= 175 C
= 0 V; V
= 30 V; R
= 10 V; R
Rev. 01 — 22 February 2001
BUK7560-100A; BUK7660-100A
and
Figure 12
DS
DS
D
8
L
G
= 15 A;
GS
DS
= V
GS
= 25 V;
= 1.2 ;
= 10 ;
= 0 V
= 0 V
= 0 V
GS
;
Min
100
89
2
1
TrenchMOS™ standard level FET
Typ
3
0.05
2
51
1030
143
90
10
45
31
20
4.5
3.5
2.5
7.5
© Philips Electronics N.V. 2001. All rights reserved.
Max
4
4.4
10
500
100
60
150
1377
171
120
Unit
V
V
V
V
V
nA
m
m
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
5 of 15
A
A