tk07h90a TOSHIBA Semiconductor CORPORATION, tk07h90a Datasheet - Page 2

• Manufacturer Part Number: tk07h90a
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Gate−source breakdown voltage
Drain cutoff current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
TK07H90A
TOSHIBA
Characteristic
Characteristic
Rise time
Turn on time
Fall time
Turn off time
Part No. (or abbreviation code)
Lot No.
A line indicates a
lead (Pb)-free package or
lead (Pb)-free finish.
(Note 1)
(Note 1)
V
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) GSS
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
Q
Q
t
t
DSF
DR
t
off
oss
t
on
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
V
I
V
I
V
V
V
V
V
I
I
dI
G
D
DR
DR
GS
DS
DS
GS
DS
DS
DD
DR
= 10 mA, V
= ±10 μA, V
= 7 A, V
= 7 A, V
= 720 V, V
= 10 V, I
= 10 V, I
= 25 V, V
= ±30 V, V
= 10 V, I
≈ 400 V, V
/ dt = 100 A / μs
50Ω
GS
GS
2
D
D
D
GS
(Ta = 25°C)
GS
DS
Test Condition
Test Condition
= 1 mA
= 3.5 A
DS
GS
= 3.5 A
GS
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 0 V
= 10 V, I
—
—
I
D
=3.5
D
V
= 7 A
DD
R
L
=400V
=114Ω
±30
900
Min
Min
2.0
3.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1650
1400
Typ.
Typ.
140
240
1.6
5.0
—
—
—
—
—
30
50
90
70
45
24
21
—
—
—
12
TK07H90A
2006-11-13
Max
Max
−1.7
±10
100
4.0
2.0
21
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7
Unit
Unit
μA
μA
nC
μC
pF
ns
ns
V
V
V
Ω
S
A
A
V