tk07h90a TOSHIBA Semiconductor CORPORATION, tk07h90a Datasheet - Page 4

• Manufacturer Part Number: tk07h90a
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
10000
1000
1000
150
200
100
100
100
50
10
10
0
5
4
3
2
1
0
−80
1
1
0.1
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
Common source
V GS = 10 V
Pulse test
−40
Drain−source voltage V
40
Case temperature Tc (°C)
Case temperature Tc (°C)
0
1
1
I D = 7 A
R
DS (ON)
80
C − V
P
D
40
– Tc
DS
3.5
− Tc
120
80
10
10
DS
1.7
160
(V)
120
C oss
C rss
C iss
200
100
100
160
4
100
400
500
300
200
0.1
100
10
−80
1
5
4
3
2
1
0
0
0
0
V DS
Common source
Tc = 25°C
Pulse test
10
Drain−source voltage V
−40
V DD =100 V
Total gate charge Q
Case temperature Tc (°C)
5
20
−0.4
Dynamic input/output
3
0
characteristics
1
200V
I
V GS
40
DR
V
th
V GS = 0 V
−0.8
− V
40
− Tc
400V
DS
60
80
g
Common source
I D = 7 A
Tc = 25°C
Pulse test
Common source
V DS = 10 V
I D = 1 mA
Pulse test
DS
−1.2
(nC)
80
(V)
120
TK07H90A
2006-11-13
−1.6
160
100
16
12
20
8
4
0