tsm55n03cp Taiwan Semiconductor Company, Ltd. (TSC), tsm55n03cp Datasheet
tsm55n03cp
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tsm55n03cp Summary of contents
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... Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● Dc-DC Converters and Motors Drivers Ordering Information Part No. Package TSM55N03CP RO TO-252 Absolute Maximum Rating Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V @4.5V. GS Pulsed Drain Current, V @4.5V ...
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Electrical Specifications ( Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain ...
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Electrical Characteristics Curve Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature o ( unless otherwise noted) Source-Drain Diode Forward Voltage 3/6 TSM55N03 25V N-Channel MOSFET Transfer Characteristics Gate Charge Version: A07 ...
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Electrical Characteristics Curve On-Resistance vs. Gate-Source Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient o ( unless otherwise noted) 4/6 TSM55N03 25V N-Channel MOSFET Threshold Voltage Version: A07 ...
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Marking Diagram SOT-252 Mechanical Drawing DIM Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec Lot Code 5/6 TSM55N03 25V N-Channel MOSFET TO-252 DIMENSION MILLIMETERS ...
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Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No ...