tsm7n60 Taiwan Semiconductor Company, Ltd. (TSC), tsm7n60 Datasheet

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tsm7n60

Manufacturer Part Number
tsm7n60
Description
600v N-channel Power Mosfet
Manufacturer
Taiwan Semiconductor Company, Ltd. (TSC)
Datasheet
Absolute Maximum Rating
* Limited by maximum junction temperature
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *
Avalanche Current (Single) (Note 2)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
Maximum Power Dissipation @Ta = 25
Operating Junction Temperature
Storage Temperature Range
General Description
The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
Features
Ordering Information
TSM7N60CZ C0
TSM7N60CI C0
Low R
Low gate charge typical @ 28nC (Typ.)
Low Crss typical @ 12pF (Typ.)
Fast Switching
ITO-220
Part No.
DS(ON)
1.2Ω (Max.)
Package
ITO-220
TO-220
TO-220
(Ta = 25
o
C
Pin Definition:
1. Gate
2. Drain
3. Source
50pcs / Tube
50pcs / Tube
o
C unless otherwise noted)
Packing
Ta = 25ºC
Ta = 100ºC
Preliminary
1/7
PRODUCT SUMMARY
600V N-Channel Power MOSFET
V
Symbol
DS
600
T
V
V
E
E
I
I
I
P
T
I
DM
STG
AS
AR
(V)
DS
GS
AS
AR
D
D
J
N-Channel MOSFET
Block Diagram
1.2 @ V
R
-55 to +150
DS(on)
Limit
600
±30
230
150
3.2
7.5
28
65
GS
7
7
7
(Ω)
=10V
TSM7N60
Version: Preliminary
I
D
3.5
Unit
(A)
mJ
mJ
ºC
o
W
V
V
A
A
A
A
A
C

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tsm7n60 Summary of contents

Page 1

... TO-220 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge ...

Page 2

... 300V 7A 10V 25V 0V 1.0MHz V = 10V 7A 300V 25Ω 0V 7A /dt = 100A/us F =27Ω G 2/7 TSM7N60 Limit RӨ 1.92 JC RӨ 83.3 JA Min Typ Max BV 600 -- -- DSS -- 1.0 1.2 DS(ON) 2.0 -- 4.0 GS(TH DSS ±100 GSS ...

Page 3

... Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform E Test Circuit & Waveform AS Preliminary 600V N-Channel Power MOSFET 3/7 TSM7N60 Version: Preliminary ...

Page 4

... Diode Reverse Recovery Time Test Circuit & Waveform Preliminary 600V N-Channel Power MOSFET 4/7 TSM7N60 Version: Preliminary ...

Page 5

... Preliminary 600V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM 5/7 TSM7N60 ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN 10.04 10.07 0.395 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) 1.40 (typ.) 0.055 (typ.) 15.0 15.20 0.591 0.52 0.54 0.020 2.35 2.73 0.093 13.50 13.55 0.531 1.11 1.49 0.044 2.60 2.80 0.102 4.49 4.50 0.176 1 ...

Page 6

... Preliminary 600V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM 6/7 TSM7N60 TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN 10.000 10.500 0.394 3.740 3.910 0.147 2.440 2.940 0.096 - 6.350 - 0.381 1.106 0.015 2.345 2.715 0.092 4.690 5 ...

Page 7

... The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Preliminary 600V N-Channel Power MOSFET Notice 7/7 TSM7N60 Version: Preliminary ...

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