tsm7900d Taiwan Semiconductor Company, Ltd. (TSC), tsm7900d Datasheet - Page 2

• Manufacturer Part Number: tsm7900d
• Description: 20v Dual N-channel Mosfet W/esd Protected
• Manufacturer: Taiwan Semiconductor Company, Ltd. (TSC)

Electrical Specifications
Notes:
a. pulse test: PW
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
b
c
300µS, duty cycle
V
V
V
V
V
V
V
V
I
V
V
V
f = 1.0MHz
V
I
R
S
D
2%
GS
DS
GS
DS
DS
GS
GS
DS
DS
GS
DS
DD
G
20V Dual N-Channel MOSFET w/ESD Protected
= 1.5A, V
= 1A, V
= 6Ω
= V
= 16V, V
= 10V, I
= 10V, I
= 10V, V
= 0V, I
= 4.5V, I
= 2.5V, I
= 4.5V
= 10V, R
= ±12V, V
Conditions
5V, V
GS
, I
GEN
D
GS
D
GS
D
D
= 250uA
D
D
GS
GS
= 250uA
L
= 4.5V,
= 6.0A
= 6A,
= 6.0A
= 5.0A
= 0V
= 10Ω,
DS
= 4.5V
= 0V
= 0V,
= 0V
2/6
Symbol
R
V
BV
I
t
t
I
C
GS(TH)
I
D(ON)
DS(ON)
V
C
C
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
SD
oss
iss
rss
DSS
fs
gd
r
gs
f
g
Min
0.6
20
30
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
3700
2000
Typ
950
450
125
140
210
0.8
0.6
3.4
1.2
30
35
30
15
--
--
--
--
TSM7900D
±100
4800
2600
Max
200
250
1.0
1.0
1.2
35
40
20
--
--
--
--
--
--
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Version: A07
Unit
mΩ
nA
uA
nC
nS
pF
V
V
A
S
V