tpcm8006 TOSHIBA Semiconductor CORPORATION, tpcm8006 Datasheet - Page 4

• Manufacturer Part Number: tpcm8006
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
25
20
15
10
50
40
30
20
10
10
5
0
0
1
0.1
0
0
4.5
10
5
6
8
Common source
V DS = 10 V
Pulse test
Drain−source voltage V
Gate−source voltage V
1
0.2
Drain current I
Ta = −55°C
1
4.3
2
0.4
25
I
I
|Y
D
D
100
fs
– V
– V
100
| – I
3
4.1
DS
GS
D
0.6
25
D
Ta = −55°C
10
4
GS
(A)
DS
Common source
V DS = 10 V
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = 3.4 V
0.8
(V)
(V)
4
5
3.6
3.8
100
1
6
4
100
0.5
0.4
0.3
0.2
0.1
0.1
50
40
30
20
10
10
0
0
1
0.1
0
0
Common source
Ta = 25°C
Pulse test
8
6
10
Drain-source voltage V
Gate−source voltage V
0.4
2
5
Drain current I
1
R
0.8
V
4.5
DS (ON)
4
I
DS
D
V GS = 4.5 V
6
– V
– V
12
10
DS
GS
– I
1.2
6
D
D
I D = 25 A
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = 3.5 V
1.6
8
(V)
(V)
TPCM8006
4.3
3.8
4.1
2008-05-23
4
100
10
2