tpcm8006 TOSHIBA Semiconductor CORPORATION, tpcm8006 Datasheet - Page 5

• Manufacturer Part Number: tpcm8006
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
25
20
15
10
10
50
40
30
20
10
−80
5
0
0.1
0
0
Common source
I D = 25 A
Ta = 25°C
Pulse test
V DS = 24V
12
6
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
V GS = 4.5 V
−40
Drain−source voltage V
Ambient temperature Ta (
V GS = 10 V
10
Total gate charge Q
Dynamic input/output
Capacitance – V
0
1
characteristics
R
DS (ON)
20
6
40
V GS
– Ta
12
30
12
V DD = 24V
80
10
DS
g
I D = 6, 12, 25 A
DS
I D = 25 A
(nC)
40
°
C iss
C rss
C)
(V)
120
C oss
6
160
100
50
20
16
12
8
4
0
5
100
0.1
2.5
1.5
0.5
10
1
0
−80
1
3
2
0
Common source
V DS = 10 V
I D = 1mA
Pulse test
10
−0.2
Drain−source voltage V
−40
Ambient temperature Ta (
4.5
−0.4
0
I
DR
V
3
th
−0.6
– V
40
– Ta
DS
1
−0.8
80
Common source
Ta = 25°C
Pulse test
V GS = 0 V
DS
°
(V)
120
C)
−1
TPCM8006
2008-05-23
−1.2
160