upa2510tm Renesas Electronics Corporation., upa2510tm Datasheet

upa2510tm

Manufacturer Part Number

upa2510tm

Description

P-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2510TM.pdf (7 pages)

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Document No. G16683EJ1V0DS00 (1st edition)

Date Published December 2003 NS CP(K)

Printed in Japan

DESCRIPTION

MOS Field Effect Transistor designed for power management

applications of notebook computers.

FEATURES

•

• Low on-state resistance

• Low C

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. Mounted on FR-4 board of 25 cm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

The

spreader. The land size is same as 8-pin TSSOP.

DS(on)1

DS(on)2

PA2510 has a thin surface mount package with a heat

2. PW ≤ 10

3. Starting T

PA2510, which has a heat spreader, is P-channel

PART NUMBER

iss

= 10.1 mΩ MAX. (V

= 14.0 mΩ MAX. (V

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

: 3000 pF TYP. (V

PA2510TM

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Note1

s, Duty Cycle ≤ 1%

Note2

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

= 25°C, V

Note1

Note3

= 0 V)

= −10.0 V, V

= −10.0 V, I

= −4.5 V, I

= −30 V, R

8PIN HWSON

PACKAGE

= −9.0 A)

x 1.6 mm, PW ≤ 10 sec

= −9.0 A)

= 25°C)

FOR SWITCHING

= 0 V)

DATA SHEET

= 25 Ω, V

D(pulse)

D(DC)

DSS

GSS

stg

MOS FIELD EFFECT TRANSISTOR

= −20.0 → 0 V

−55 to +150

−30.0

m20.0

m18.0

m72.0

−18.0

32.4

0.75 ±0.15

150

2.7

PACKAGE DRAWING (Unit: mm)

°C

5.8 ±0.1

6.4 ±0.1

4.15 ±0.2

EQUIVALENT CIRCUIT

Gate

Protection

Diode

0.85 ±0.15

PA2510

1, 2, 3

5, 6, 7, 8: Drain

Source

Drain

: Source

: Gate

Body

Diode

0.10 S

2003

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